MTP30P05 P-Channel Power MOSFET Transistor 50V 30A TO-220AB
MTP30P05 MOSFET Transistor High-current P-channel power MOSFET transistor designed for power switching and control applications.
26.00 EGP
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The MTP30P05 MOSFET Transistor is a robust P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed to handle substantial current and moderate voltages in electronic switching and power management applications. Manufactured by ON Semiconductor / AMI Semiconductor, this device is typically supplied in a through-hole TO-220AB package, which facilitates easy mounting to heat sinks or printed circuit boards for improved thermal performance.
Features:
- 30A continuous drain current and 50V drain-to-source voltage rating.
- Low on-resistance of 0.065Ω for reduced power losses.
- Fast switching times with turn-on delay of 15ns and turn-off delay of 28ns.
- Operating temperature range from -55°C to 175°C.
- Temperature-compensating PSPICE model for accurate simulations.
Specifications:
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | ID=250μA,VGS=0V | -50 | – | – | V |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250μA | -2 | – | -4 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=Rated BVDSS,VGS=0V | – | – | -1 | μA |
| VDS=0.8×Rated BVDSS,TC=150∘C | – | – | -25 | μA | ||
| Gate to Source Leakage Current | IGSS | VGS=±20V | – | – | ±100 | nA |
| Drain to Source On Resistance | rDS(ON) | ID=30A,VGS=−10V | – | – | 0.065 | Ω |
| Turn-On Time | t(ON) | VDD=−25V,ID=15A,RL=1.67Ω,VGS=−10V,RG=6.25Ω | – | – | 80 | ns |
| Turn-On Delay Time | td(ON) | (fREF) = 1.6MHz | – | – | 23 | ns |
| Rise Time | tr | (fREF) = 1.6MHz | – | – | 28 | ns |
| Turn-Off Delay Time | td(OFF) | (fREF) = 1.6MHz | – | – | 18 | ns |
| Fall Time | tf | (fREF) = 1.6MHz | – | – | 100 | ns |
| Total Gate Charge | Qg(TOT) | VGS=0 to −20V,VDD=−40V,ID=30A,RL=1.33Ω,IG(REF)=1.6mA | – | 140 | 170 | nC |
| Gate Charge at -10V | Qg(−10) | (fREF) = 1.6MHz | – | 70 | 85 | nC |
| Threshold Gate Charge | Qg(TH) | (fREF) = 1.6MHz | – | 5.5 | 6.6 | nC |
| Input Capacitance | CISS | VDS=−25V,VGS=0V,(fREF)=1MHz | – | – | 3200 | pF |
| Output Capacitance | COSS | (fREF) = 1MHz | – | – | 800 | pF |
| Reverse Transfer Capacitance | CRSS | (fREF) = 1MHz | – | – | 175 | pF |
| Thermal Resistance, Junction to Case | RJJC | – | – | 1.25 | °C/W | |
| Thermal Resistance, Junction to Ambient | RJJA | TO-220, TO-263 | – | – | 62 | °C/W |
Pin Configuration:
Applications:
- Switching regulators for efficient power conversion.
- Motor drivers in automation and robotics.
- Relay drivers for control systems.
- Switching converters in power supplies.
- Battery management systems for energy storage.
Package Include:
1x MTP30P05 P-Channel MOSFET Transistor (TO-220).