Features and benefits
- 100 mA output current capability
- Built-in bias resistors
- Simplified circuit design
- Reduces component count
- Reduces pick and place costs
Specifications
| Attribute | Value |
| Category | Triode/MOS Tube/Transistor/Digital Transistors |
| Datasheet | Nexperia PUMD12,135 |
| Package | TSSOP-6 (SOT363) |
| DC Current Gain (hFE@Ic,Vce) | 80@5mA,5V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@500uA,10mA |
| Transistor Type | 1 NPN,1 PNP – Pre-Biased |
| Transition Frequency (fT) | 230MHz;180MHz |
| Power Dissipation (Pd) | 300mW |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector Cut-Off Current (Icbo) | 1uA |
Applications
- Low current peripheral driver
- Controlling IC inputs
- Replacement of general purpose transistors in digital applications
