Tip142 NPN Darlington Bipolar Power Transistor 100V 10A TO-247
The TIP142 belongs to a complementary family of bipolar Darlington devices documented by STMicroelectronics. It is the NPN member of the family, while the TIP147 is the corresponding PNP device. The TIP142 is a discrete semiconductor component organized around base, collector, and emitter connections. Its designation is also used as the marking on the component, clearly identifying the device within the manufacturer’s product range.
STMicroelectronics describes its construction as planar technology with a “base island” layout. The internal arrangement is monolithic, meaning the Darlington structure is formed inside one semiconductor component rather than connected from two separately packaged transistors. A Darlington arrangement combines two transistor stages into one functional unit. This internal organization distinguishes the TIP142 from a conventional single-transistor arrangement and establishes the relationship between the input connection and the collector-emitter current path.
Features
- Monolithic Darlington transistor configuration.
- NPN bipolar transistor design.
- Planar semiconductor technology with base-island layout.
- High DC current gain.
- Low collector-emitter saturation voltage.
- Integrated antiparallel collector-emitter diode.
- Built-in resistor network.
- Complementary design with the TIP147 PNP transistor.
Specifications
| Parameter | Specification |
|---|---|
| Manufacturer: | STMicroelectronics |
| Part Number: | TIP142 |
| Device Marking: | TIP142 |
| Transistor Type: | NPN Bipolar Darlington |
| Configuration: | Monolithic Darlington |
| Package: | TO-247 |
| Number of Pins: | 3 |
| Pin Configuration: | 1 – Base, 2 – Collector, 3 – Emitter |
| Collector-Base Voltage (VCBO): | 100 V Max. |
| Collector-Emitter Voltage (VCEO): | 100 V Max. |
| Emitter-Base Voltage (VEBO): | 5 V Max. |
| Continuous Collector Current (IC): | 10 A Max. |
| Peak Collector Current (ICM): | 20 A Max. |
| Base Current (IB): | 0.5 A Max. |
| Total Power Dissipation (PTOT): | 125 W Max. at TC = 25°C |
| Collector-Emitter Sustaining Voltage: | 100 V Min. at IC = 30 mA |
| DC Current Gain (hFE): | 1000 Min. at IC = 5 A, VCE = 4 V |
| DC Current Gain (hFE): | 500 Min. at IC = 10 A, VCE = 4 V |
| Collector-Emitter Saturation Voltage: | 2 V Max. at IC = 5 A, IB = 10 mA |
| Collector-Emitter Saturation Voltage: | 3 V Max. at IC = 10 A, IB = 40 mA |
| Base-Emitter On Voltage: | 3 V Max. at IC = 10 A, VCE = 4 V |
| Collector Cut-Off Current (ICBO): | 1 mA Max. at VCB = 100 V |
| Collector Cut-Off Current (ICEO): | 2 mA Max. at VCE = 50 V |
| Emitter Cut-Off Current (IEBO): | 2 mA Max. at VEB = 5 V |
| Turn-On Time (ton): | 0.9 µs |
| Turn-Off Time (toff): | 4 µs |
| Internal Resistor R1: | 5 kΩ |
| Internal Resistor R2: | 60 Ω |
| Integrated Diode: | Antiparallel Collector-Emitter Diode |
| Thermal Resistance (RthJC): | 1°C/W Max. |
| Maximum Junction Temperature: | 150°C |
| Storage Temperature: | -65°C to +150°C |
| Package Dimension D: | 19.85–20.15 mm |
| Package Dimension E: | 15.45–15.75 mm |
| Package Thickness A: | 4.85–5.15 mm |
| Lead Pitch (e): | 5.30–5.60 mm |
| Complementary Transistor: | TIP147 (PNP) |
| Manufacturer Packaging: | Tube |
Applications
- Linear Industrial Equipment.
- Industrial Switching Equipment.
Package Contents
- 1x Tip142 NPN Darlington Bipolar Power Transistor 100V 10A TO-247
