Name: TIP31C NPN Transistor 100V 3A TO-220
SKU: 3393563847227
Price: 7.50 EGP
Availability: InStock

TIP31C NPN Transistor 100V 3A TO-220

The TIP31C is an NPN epitaxial silicon transistor intended for medium power linear switching applications. It is complementary to the TIP32 series and is supplied in a TO-220 3-lead package. The TIP31C has a 100 V collector-base voltage rating, a 100 V collector-emitter voltage rating, and a 5 V emitter-base voltage rating. It is rated for 3 A DC collector current, 5 A pulsed collector current, and 1 A base current. Collector dissipation is rated at 2 W at TA = 25°C and 40 W at TC = 25°C. The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.

Features

NPN epitaxial silicon transistor
Medium power linear switching applications
Complementary to TIP32 series
100 V collector-emitter voltage rating for TIP31C
100 V collector-base voltage rating for TIP31C
3 A DC collector current
5 A pulsed collector current
1 A base current
TO-220 3-lead package
Pin configuration: Base, Collector, Emitter

Specifications

Absolute Maximum Ratings
Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage, TIP31C	100	V
VCEO	Collector-Emitter Voltage, TIP31C	100	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current, DC	3	A
ICP	Collector Current, Pulse	5	A
IB	Base Current	1	A
TJ	Junction Temperature	150	°C
TSTG	Storage Temperature Range	-65 to 150	°C

Thermal Characteristics
Symbol	Parameter	Value	Unit
PC	Collector Dissipation, TA = 25°C	2	W
PC	Collector Dissipation, TC = 25°C	40	W

Electrical Characteristics
Parameter	Conditions	Value	Unit
Collector-Emitter Sustaining Voltage, VCEO(sus)	TIP31C, IC = 30 mA, IB = 0	Min 100	V
Collector Cut-Off Current, ICEO	TIP31C, VCE = 60 V, IB = 0	Max 0.3	mA
Collector Cut-Off Current, ICES	TIP31C, VCE = 100 V, VEB = 0	Max 200	µA
Emitter Cut-Off Current, IEBO	VEB = 5 V, IC = 0	Max 1	mA
DC Current Gain, hFE	VCE = 4 V, IC = 1 A	Min 25	–
DC Current Gain, hFE	VCE = 4 V, IC = 3 A	Min 10, Max 50	–
Collector-Emitter Saturation Voltage, VCE(sat)	IC = 3 A, IB = 375 mA	Max 1.2	V
Base-Emitter On Voltage, VBE(on)	VCE = 4 V, IC = 3 A	Max 1.8	V
Current Gain Bandwidth Product, fT	VCE = 10 V, IC = 500 mA, f = 1 MHz	3.0	MHz