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Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20
The TC5047AP-1 is a 1024-word x 4-bit CMOS static RAM with 5V supply, ultra-low power consumption, and 550ns access time for battery-backed systems.
100.00 EGP
Buy NowToshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20
The TC5047AP-1 is a static read/write memory organized as 1024 words by 4 bits, manufactured using Silicon Gate CMOS technology. It features ultra-low power dissipation, making it suitable for battery-operated portable memory systems and nonvolatile memory applications with battery backup. The device operates from a single 5V power supply and requires no refresh cycles due to its static operation, which simplifies power supply circuit design. It includes three-state outputs for easy memory expansion and microprocessor peripheral interface, alongside low minimum data retention voltage requiring simple backup circuitry.
Features
- Low Power Dissipation: 110 µW (Max.) Standby power, 110 mW (Max.) Operating power
- Power Supply: Single 5V supply requirement
- Data Retention Voltage: 2.0 V ~ 5.5 V
- Static Operation: Requires no refresh cycles
- Outputs: Three-state outputs
- Compatibility: TTL compatible inputs and outputs
- Access Time: tACC ≤ 550 ns (Max.)
- Package: 20-pin plastic Dual-In-Line Package (DIP), 0.4-inch width
Specifications
Recommended Operating Conditions (Ta = -30 to 85 °C)
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Supply Voltage | VDD | 4.5 | 5.0 | 5.5 | V |
| Input High Voltage | VIH | VDD – 1.5 | – | VDD + 0.3 | V |
| Input Low Voltage | VIL | -0.3 | – | 0.6 | V |
| Data Retention Voltage | VDH | 2.0 | – | 5.5 | V |
DC Electrical Characteristics (Ta = -30 to 85 °C)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Standby Current | IDDS | VDD = 2 ~ 5.5V, CE2 = 0.2V | – | – | 20 | μA |
| Operating Current | IDDO | VDD = 5.5V, tCYC = 1 μs | – | 10 | 20 | mA |
| Input Current | IIN | 0V ≤ VIN ≤ VDD | -1.0 | – | 1.0 | μA |
| Output Leakage Current | ILO | 0V ≤ VOUT ≤ VDD | -5.0 | – | 5.0 | μA |
| Output High Current | IOH | VDD = 4.5V, VOH = 2.4V | -1.0 | – | – | mA |
| Output Low Current | IOL | VDD = 4.5V, VOL = 0.4V | 1.6 | – | – | mA |
AC Characteristics (VDD = 4.5 ~ 5.5V, Ta = -30 to 85 °C, CL = 100 pF)
| Parameter | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Access Time | tACC | – | 550 | ns |
| Read Cycle Time | tRC | 650 | – | ns |
| Write Cycle Time | tWC | 650 | – | ns |
| Precharge Time | tPC | 100 | – | ns |
| Write Pulse Width | tWP | 300 | – | ns |
| Data Setup Time | tDS | 300 | – | ns |
| Data Hold Time | tDH | 0 | – | ns |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Power Supply Voltage | VDD | -0.3 to 7.0 | V |
| Input Voltage | VIN | -0.3 to VDD + 0.3 | V |
| Output Voltage | VOUT | 0 to VDD | V |
| Power Dissipation | PD | 700 (at Ta = 85 °C) | mW |
| Operating Temperature | TOPR | -30 to 85 | °C |
| Storage Temperature | TSTG | -55 to 150 | °C |
Applications
- Battery-operated portable memory systems
- Nonvolatile memory with battery backup
- Microprocessor peripheral memory
Package Content
- 1 x Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20