IRF150 HEXFET TRANSISTOR
Type Designator: IRF150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Drain Current |Id|: 38 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3700 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
