IRF730 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Detailed Specifications:-
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220AB-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 400 V |
| Id – Continuous Drain Current: | 5.5 A |
| Rds On – Drain-Source Resistance: | 1 Ohms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 38 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 74 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Vishay Semiconductors |
| Configuration: | Single |
| Fall Time: | 14 ns |
| Product Type: | MOSFET |
| Rise Time: | 15 ns |
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