2SK1357 N-Channel MOSFET Transistor TO-3P

Specification:

• Type Designator: 2SK1357
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Pd – Maximum Power Dissipation: 125 W
• |Vds| – Maximum Drain-Source Voltage: 900 V
• |Vgs| – Maximum Gate-Source Voltage: 30 V
• |Vgs(th)| – Maximum Gate-Threshold Voltage: 3.5 V
• |Id| – Maximum Drain Current: 5 A
• Tj – Maximum Junction Temperature: 150 °C
  
• Qg – Total Gate Charge: 60 nC
• tr – Rise Time: 18 nS
  
• Output Capacitance: 100 pF
• Rds – Maximum Drain-Source On-State Resistance: 2.8 Ohm
• Package: TO-3P

2SK1357 Datasheet