Specification:
- Type Designator: 2SA1106
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 100 W
- Maximum Collector-Base Voltage |Vcb|: 200 V
- Maximum Collector-Emitter Voltage |Vce|: 140 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 20 MHz
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO-3PN
