2SA1106 PNP Power Transistor TO-3P

Specification:

• Type Designator: 2SA1106
• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 100 W
• Maximum Collector-Base Voltage |Vcb|: 200 V
• Maximum Collector-Emitter Voltage |Vce|: 140 V
• Maximum Emitter-Base Voltage |Veb|: 6 V
• Maximum Collector Current |Ic max|: 10 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 20 MHz
• Forward Current Transfer Ratio (hFE), MIN: 50
• Package: TO-3PN

2SA1106 Datasheet