BDW93C NPN Darlington Transistor 12A 100V TO-220

BDW93C NPN Darlington Transistor 12A 100V TO-220

The BDW93C is a robust silicon power transistor engineered using an Epitaxial-Base NPN process and configured in a monolithic Darlington arrangement. This design integrates two transistors into a single device, resulting in a component capable of delivering very high current gain. It is specifically intended for demanding roles in both power linear amplification and high-speed switching circuits, making it a versatile solution for controlling significant power levels in industrial environments.

The transistor is constructed in a monolithic Darlington configuration, which internally pairs two bipolar transistors to multiply the current gain, allowing a small base current to control a much larger collector current. This entire assembly is securely housed in a industry-standard Jedec TO-220 plastic package. This package is renowned for its mechanical durability and excellent thermal performance, facilitating easy mounting to a heat sink to manage the substantial power dissipation during operation.

A key feature of its design is the integration of an antiparallel collector-emitter diode within the same monolithic structure. This internal diode provides inherent protection against voltage spikes in inductive load applications. Furthermore, the BDW93C is offered as part of a complementary pair, with the BDW94C serving as its direct PNP counterpart, which simplifies the design of push-pull output stages and other symmetrical circuits.

Features:

• Monolithic Darlington configuration.
• Integrated antiparallel collector-emitter diode.
• Complementary PNP – NPN devices available.
• STMicroelectronics PREFERRED SALESTYPES.

Specifications:

Pinout Diagram:

Footprint Diagram:

Applications:

• Linear Industrial Equipment.
• Switching Industrial Equipment.

Package Contents:

• 1x BDW93C NPN Darlington Transistor 12A 100V TO-220

Datasheet