BDW93C NPN Darlington Transistor 12A 100V TO-220
The BDW93C is a robust silicon power transistor engineered using an Epitaxial-Base NPN process and configured in a monolithic Darlington arrangement. This design integrates two transistors into a single device, resulting in a component capable of delivering very high current gain. It is specifically intended for demanding roles in both power linear amplification and high-speed switching circuits, making it a versatile solution for controlling significant power levels in industrial environments.
The transistor is constructed in a monolithic Darlington configuration, which internally pairs two bipolar transistors to multiply the current gain, allowing a small base current to control a much larger collector current. This entire assembly is securely housed in a industry-standard Jedec TO-220 plastic package. This package is renowned for its mechanical durability and excellent thermal performance, facilitating easy mounting to a heat sink to manage the substantial power dissipation during operation.
A key feature of its design is the integration of an antiparallel collector-emitter diode within the same monolithic structure. This internal diode provides inherent protection against voltage spikes in inductive load applications. Furthermore, the BDW93C is offered as part of a complementary pair, with the BDW94C serving as its direct PNP counterpart, which simplifies the design of push-pull output stages and other symmetrical circuits.
Features:
- Monolithic Darlington configuration.
- Integrated antiparallel collector-emitter diode.
- Complementary PNP – NPN devices available.
- STMicroelectronics PREFERRED SALESTYPES.
Specifications:
| Parameter | Value | Condition | Unit |
|---|---|---|---|
| Collector-Emitter Voltage: | 100 | IB = 0 | V |
| Collector-Base Voltage: | 100 | IE = 0 | V |
| Collector Current: | 12 | A | |
| Peak Collector Current: | 15 | A | |
| Base Current: | 0.2 | A | |
| Total Power Dissipation: | 80 | Tcase ≤ 25°C | W |
| DC Current Gain: | 1000 (Min) | IC = 5 A, VCE = 4 V | |
| Collector-Emitter Saturation Voltage: | 2.5 (Max) | IC = 10 A, IB = 100 mA | V |
| Base-Emitter Saturation Voltage: | 2.5 (Max) | IC = 10 A, IB = 100 mA | V |
| Thermal Resistance, Junction to Case: | 1.56 | °C/W | |
| Operating Junction Temperature: | 150 | °C |
Pinout Diagram:
Footprint Diagram:
Applications:
- Linear Industrial Equipment.
- Switching Industrial Equipment.
Package Contents:
- 1x BDW93C NPN Darlington Transistor 12A 100V TO-220
