MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
MagnaChip MBQ40T120FESTH 1200V/80A Field Stop Trench IGBT, TO-247, ultra soft fast recovery diode. For PFC, UPS & inverter applications.
250.00 ج.م
متوفرالكود 3496300159444
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MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
The MBQ40T120FESTH from Magnachip Semiconductor is a high speed 1200V Field Stop Trench IGBT rated for a collector current of 80A at TC = 25°C. It is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(sat), high switching performance and excellent quality.
The device incorporates an ultra soft, fast recovery anti-parallel diode (trr = 100ns typ.) and offers high input impedance, ultra narrowed VF distribution control and a positive temperature coefficient for easy paralleling. This IGBT is intended for PFC, UPS & Inverter applications.
Features
- High speed switching & low power loss
- VCE(sat) = 2.0V @ IC = 40A
- High input impedance
- trr = 100ns (typ.)
- Ultra soft, fast recovery anti-parallel diode
- Ultra narrowed VF distribution control
- Positive temperature coefficient for easy paralleling
Specifications
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCES | 1200 | V |
| Gate-emitter voltage | VGES | ±20 | V |
| Collector current @ TC = 25°C | IC | 80 | A |
| Collector current @ TC = 100°C | IC | 40 | A |
| Pulsed collector current (pulse time limited by Tjmax) | ICM | 160 | A |
| Diode forward current @ TC = 100°C | IF | 40 | A |
| Diode pulsed current (pulse time limited by Tjmax) | IFM | 160 | A |
| Power dissipation @ TC = 25°C | PD | 357 | W |
| Power dissipation @ TC = 100°C | PD | 142 | W |
| Short circuit withstand time (VCE = 600V, VGE = 15V, TC = 150°C) | tsc | 10 | μs |
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C |
Thermal Characteristics
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Thermal resistance, junction-to-ambient | RθJA | 40 | °C/W |
| Thermal resistance, junction-to-case (IGBT) | RθJC | 0.35 | °C/W |
| Thermal resistance, junction-to-case (Diode) | RθJC | 0.8 | °C/W |
Electrical Characteristics (TC = 25°C unless otherwise specified)
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCES | IC = 1mA, VGE = 0V | 1200 | – | – | V |
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 1mA | 4.5 | 5.5 | 6.5 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V | – | – | 1 | mA |
| Gate-emitter leakage current | IGES | VGE = 20V, VCE = 0V | – | – | ±250 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 40A, VGE = 15V, TC = 25°C | – | 2.0 | 2.4 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 40A, VGE = 15V, TC = 150°C | – | 2.45 | – | V |
| Total gate charge | Qg | VCE = 600V, IC = 40A, VGE = 15V | – | 341 | – | nC |
| Gate-emitter charge | Qge | VCE = 600V, IC = 40A, VGE = 15V | – | 52 | – | nC |
| Gate-collector charge | Qgc | VCE = 600V, IC = 40A, VGE = 15V | – | 126 | – | nC |
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | – | 6030 | – | pF |
| Reverse transfer capacitance | Cres | VCE = 30V, VGE = 0V, f = 1MHz | – | 107 | – | pF |
| Output capacitance | Coes | VCE = 30V, VGE = 0V, f = 1MHz | – | 206 | – | pF |
Switching Characteristics (Inductive Load, VGE = 15V, VCC = 600V, IC = 40A, RG = 10Ω)
| Characteristics | Symbol | TC = 25°C | TC = 150°C | Unit |
|---|---|---|---|---|
| Turn-on delay time | td(on) | 65 | 70 | ns |
| Rise time | tr | 55 | 62 | ns |
| Turn-off delay time | td(off) | 308 | 325 | ns |
| Fall time | tf | 40 | 62 | ns |
| Turn-on switching energy | Eon | 1.96 | 2.35 | mJ |
| Turn-off switching energy | Eoff | 0.54 | 1.61 | mJ |
| Total switching energy | Ets | 2.50 | 3.96 | mJ |
Diode Characteristics (TC = 25°C unless otherwise specified)
| Characteristics | Symbol | Test Condition | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward voltage | VF | IF = 40A, TC = 25°C | 2.4 | 3.0 | V |
| Forward voltage | VF | IF = 40A, TC = 150°C | 2.45 | – | V |
| Reverse recovery time | trr | IF = 40A, di/dt = 200A/μs, TC = 25°C | 100 | – | ns |
| Reverse recovery current | Irr | IF = 40A, di/dt = 200A/μs, TC = 25°C | 7 | – | A |
| Reverse recovery charge | Qrr | IF = 40A, di/dt = 200A/μs, TC = 25°C | 350 | – | nC |
| Reverse recovery time | trr | IF = 40A, di/dt = 200A/μs, TC = 150°C | 180 | – | ns |
| Reverse recovery current | Irr | IF = 40A, di/dt = 200A/μs, TC = 150°C | 10 | – | A |
| Reverse recovery charge | Qrr | IF = 40A, di/dt = 200A/μs, TC = 150°C | 900 | – | nC |
Applications
- PFC (Power Factor Correction)
- UPS (Uninterruptible Power Supplies)
- Inverters
Package Content
- 1 x MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
DataSheet
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