Description
The 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.
The 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment.
Features
- Low Gate Charge
- RDS(on) = 0.048 Ω (TYP.)
- 100% Avalanche Tested
- Repetitive Avalanche at 100°C
- High Current Capability
- Operating Temperature: 150°C
- Application Oriented Characterization
Specifications:
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage (VGS=0) | VDS | 60 | V | |
| Drain-Gate Voltage (RGS=20kΩ) | VDGR | 60 | V | |
| Gate-Source Voltage | VGS | ± 20 | V | |
| Drain Current (Continuous) | TC=25°C | ID | 25 | A |
| TC=100°C | 17 | A | ||
| Drain Current (Pulsed) (Note 2) | IDM | 100 | A | |
| Single Pulse Avalanche Energy (starting TJ =25°C, ID =25A, VDD =25 V) | EAS | 100 | mJ | |
| Power Dissipation at TC=25°C (TO-252) | PD | 41 | W | |
| Junction Temperature | TJ | 150 | °C | |
| Storage Temperature | TSTG | -65 ~ +150 | °C | |
