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K1363 N-Channel MOSFET Transistor 900V 8A TO-3P

High-voltage K1363 N-channel MOSFET 900 V, 8 A class power transistor for SMPS, inverters and industrial converters; designed for rugged high-voltage switching.

30.00 EGP

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Availability: In Stock
SKU:3496300070312
K1363 N-Channel MOSFET Transistor 900V 8A TO-3P

The 2SK1363 is a high-voltage, high-speed switching power MOSFET developed by Toshiba. It is constructed using a silicon N-channel MOS process and their proprietary π-MOS II.5 technology, designed to deliver efficient performance in applications requiring fast switching and high current handling.

This transistor is characterized by its low drain-source ON resistance (typically 1.1Ω) and high forward transfer admittance (typically 4.0 S), which contribute to reduced conduction losses and improved efficiency. It is an enhancement-mode device, meaning it requires a positive gate voltage to conduct, with a gate threshold voltage ranging from 1.5V to 3.5V.

Housed in a TO-3P package, the 2SK1363 is rated for a drain-source voltage of 900V and a continuous drain current of 8A, making it suitable for demanding power applications. The device also features low leakage current and built-in source-drain diode, and it is important to note that it is an electrostatic sensitive device requiring careful handling during installation.

Features:
  • Low Drain-Source ON Resistance: RDS(ON) = 1.1Ω
  • High Forward Transfer Admittance: |Yfs| = 4.0 S
  • Low Leakage Current: IDSS = 300 μA (Max.) @ VDS = 720V
  • Enhancement-Mode: Vth = 1.5V to 3.5V @ VDS = 10V, ID = 1mA
Specifications:
CHARACTERISTIC SYMBOL VALUE UNIT
Absolute Maximum Ratings (Ta = 25°C)
Drain-Source Voltage: VDSS 900 V
Drain Current (DC): ID 8 A
Drain Power Dissipation (Tc=25°C): PD 90 W
Channel Temperature: Tch 150 °C
Electrical Characteristics (Ta = 25°C)
Drain-Source Breakdown Voltage: V(BR)DSS 900 (Min.) V
Drain-Source ON Resistance: RDS(ON) 1.4 (Max.) Ω
Input Capacitance: Ciss 1800 (Max.) pF
Total Gate Charge: Qg 240 (Max.) nC
Applications:
  • Switch-mode power supplies.
  • High-voltage inverters.
  • Motor drive front-ends.
  • Industrial power converters.
  • Inductive load switching.
Package Contents:
  • 1x K1363 N-Channel MOSFET Transistor 900V 8A TO-3P
Datasheet
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