K1363 N-Channel MOSFET Transistor 900V 8A TO-3P

K1363 N-Channel MOSFET Transistor 900V 8A TO-3P

The 2SK1363 is a high-voltage, high-speed switching power MOSFET developed by Toshiba. It is constructed using a silicon N-channel MOS process and their proprietary π-MOS II.5 technology, designed to deliver efficient performance in applications requiring fast switching and high current handling.

This transistor is characterized by its low drain-source ON resistance (typically 1.1Ω) and high forward transfer admittance (typically 4.0 S), which contribute to reduced conduction losses and improved efficiency. It is an enhancement-mode device, meaning it requires a positive gate voltage to conduct, with a gate threshold voltage ranging from 1.5V to 3.5V.

Housed in a TO-3P package, the 2SK1363 is rated for a drain-source voltage of 900V and a continuous drain current of 8A, making it suitable for demanding power applications. The device also features low leakage current and built-in source-drain diode, and it is important to note that it is an electrostatic sensitive device requiring careful handling during installation.

Features:

• Low Drain-Source ON Resistance: RDS(ON) = 1.1Ω
• High Forward Transfer Admittance: |Yfs| = 4.0 S
• Low Leakage Current: IDSS = 300 μA (Max.) @ VDS = 720V
• Enhancement-Mode: Vth = 1.5V to 3.5V @ VDS = 10V, ID = 1mA

Specifications:

Applications:

• Switch-mode power supplies.
• High-voltage inverters.
• Motor drive front-ends.
• Industrial power converters.
• Inductive load switching.

Package Contents:

• 1x K1363 N-Channel MOSFET Transistor 900V 8A TO-3P

Datasheet