Specifications:
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 35 W
- Maximum Collector-Base Voltage |Vcb|: 600 V
- Maximum Collector-Emitter Voltage |Vce|: 600 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Forward Current Transfer Ratio (hFE), MIN: 20
- Package: TO220F
