Home
Shop
Shipping across Egypt
WhatsApp support+20 121 198 1188Hotline+20 248 813 824
عربي

2SK1460 N-Channel MOSFET Transistor 900V 3.5A TO-220FI

2SK1460 N-channel power MOSFET, 900V 3.5A 40W, ultrahigh-speed switching, TO-220FI. No gate protection diode.

40.00 EGP

In stockSKU 3496300151097
Buy Now
Shipping across EgyptDelivered to your door
Cash on deliveryPay when your order arrives
Not sure it fits your project?Ask us on WhatsApp - we reply fast
Availability: In Stock
SKU:3496300151097
2SK1460 N-Channel MOSFET Transistor 900V 3.5A TO-220FI

The 2SK1460 is a high-voltage N-Channel power MOSFET transistor designed for switching power supplies, DC-DC converters, industrial power control systems, and high-speed switching applications. The transistor is manufactured in a TO-220 package that provides reliable thermal dissipation and efficient high-power operation for through-hole electronic circuits and industrial power electronics applications.

Features:
  • Low drain-source on-state resistance for minimal conduction losses.
  • Ultrahigh-speed switching capability.
  • Moldless package facilitating mounting.
  • High voltage capability with 900V drain-source breakdown voltage.
  • Wide operating temperature range from -55°C to +150°C.
  • TO-220FI fully isolated package for enhanced safety.
  • Fast switching times for high-frequency applications.
Specifications:
parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDSS) 900V
Gate-Source Voltage (VGSS) ±30V
Continuous Drain Current (ID) 3.5A
Pulsed Drain Current (IDP) 7A
Allowable Power Dissipation (PD) 2W (Ta=25°C, no heat sink) / 40W (Tc=25°C)
Drain-Source On-State Resistance (RDS(on)) 2.8Ω (Typ.) / 6.3Ω (Max.)
Drain-Source Breakdown Voltage (V(BR)DSS) 900V (Min.)
Zero Gate Voltage Drain Current (IDSS) 0.1mA (Typ.) / 1.0mA (Max.)
Gate-Source Leakage Current (IGSS) ±100nA (Max.)
Gate-Source Cutoff Voltage (VGS(off)) 2.0V (Min.) / 3.0V (Typ.) / 4.0V (Max.)
Forward Transfer Admittance (|Yfs|) 1.0S (Min.) / 2.0S (Typ.)
Input Capacitance (Ciss) 700pF (Typ.)
Output Capacitance (Coss) 300pF (Typ.)
Reverse Transfer Capacitance (Crss) 70pF (Typ.)
Turn-On Delay Time (td(on)) 15ns (Typ.)
Rise Time (tr) 35ns (Typ.)
Turn-Off Delay Time (td(off)) 200ns (Typ.)
Fall Time (tf) 65ns (Typ.)
Diode Forward Voltage (VSD) 1.8V (Typ.)
Storage Temperature Range -55°C to +150°C
Channel Temperature (Tch) 150°C (Max.)
Package Type TO-220FI (Fully Isolated)
Mounting Style Through-Hole
Applications:
  • Ultrahigh-speed switching circuits.
  • Switch mode power supplies and SMPS designs.
  • DC-DC converter circuits.
  • High-voltage power switching applications.
  • Power inverter designs.
  • High-frequency power management systems.
Package Contents

1x 2SK1460 N-Channel MOSFET Power Transistor.

Datasheet

Back to Top
Product has been added to your cart