2SK1611 N-Channel Power MOSFET Transistor TO-220F 800V, 3A
The 2SK1611 N‑Channel Power MOSFET Transistor TO‑220F 800V 3A is a robust silicon N‑channel power F‑MOSFET designed for high‑voltage and high‑efficiency switching applications. This device combines a high drain‑source voltage rating of 800 V with a continuous drain current capability of 3 A, making it suitable for demanding power conversion and control circuits. Its TO‑220F ( package supports improved thermal performance, facilitating effective heat dissipation during operation.
Features:
- High avalanche energy capability
- VGSS: 30V guaranteed
- Low RDS(on), high-speed switching characteristic
- N‑Channel enhancement‑mode power MOSFET for high‑voltage switching.
- High drain‑to‑source breakdown voltage of 800 V.
- Continuous drain current rating up to 3 A.
Specifications:
| Parameter | Value |
|---|---|
| Drain‑Source Breakdown Voltage (VDSS) | 800 V |
| Gate‑Source Voltage (VGSS) | ±30 V |
| Continuous Drain Current (ID) | 3 A |
| Pulse Drain Current (IDP) | 6 A |
| Avalanche Energy Capacity (EAS) | 20 mJ |
| Max Power Dissipation (PD) | 50 W |
| Operating Junction Temp (Tj) | −55 °C to +150 °C |
| Storage Temp (Tstg) | −55 °C to +150 °C |
| Package Type | TO‑220F |
Applications:
- High‑voltage switching and power conversion circuits.
- SMPS power supplies and DC‑DC converters.
- Motor control and relay drivers.
- Industrial power electronics and amplification.
- AC adaptor and inverter circuits.
