2SK4005 N-Channel MOSFET Transistor 900V 6A TO-220F
2SK4005 N-Channel MOSFET : 900V , 6A , TO-220F package. High-voltage power switch for motor drives, DC-DC converters & solenoid drives.
20.00 EGP
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The 2SK4005 is a high-performance N-channel MOSFET transistor. It features high breakdown voltage and low on-resistance, making it a reliable choice for robust device performance, power switching, and high-voltage driving circuits. The component comes in an isolated TO-220F package, facilitating simplified hardware installation and efficient thermal layout management.
Features
- High Voltage Capability
- Low On-Resistance
- Quality Tested
- Reliable Performance
Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 900 | V |
| VGS | Gate-Source Voltage-Continuous | ±30 | V |
| ID | Drain Current-Continuous | 6.0 | A |
| IDM | Drain Current-Single Pulse | 24 | A |
| PD | Total Dissipation @ Tc = 25°C | 70 | W |
| TJ | Max. Operating Junction Temperature | -55 to 150 | °C |
| Tstg | Storage Temperature | -55 ~ 150 | °C |
Electrical Characteristics (Tc = 25°C)
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0; ID = 0.25mA | 900 | – | V |
| VGS(th) | Gate Threshold Voltage | VDS = 10V; ID = 0.25mA | 2.5 | 3.5 | V |
| RDS(on)1 | Drain-Source On-Resistance | VGS = 10V; ID = 3.0A | – | 2.5 | Ω |
| IGSS | Gate-Body Leakage Current | VGS = ±30V; VDS = 0 | – | ±0.1 | uA |
| IDSS | Zero Gate Voltage Drain Current | VGS = 0 | – | 25 | uA |
| VSD | Forward On-Voltage | IS = 6.0A | – | 1.3 | V |
Thermal Characteristics
| Symbol | Parameter | Max | Unit |
|---|---|---|---|
| Rthj-c | Thermal Resistance, Junction to Case | c | °C/W |
Applications
- Motor drives
- DC-DC converters
- Power switches
- Solenoid drives
Package Content
- 1 x 2SK4005 N-Channel MOSFET Transistor 900V 6A TO-220F
DataSheet
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