2SK4005 N-Channel MOSFET Transistor 900V 6A TO-220F
The 2SK4005 is a high-performance N-channel MOSFET transistor. It features high breakdown voltage and low on-resistance, making it a reliable choice for robust device performance, power switching, and high-voltage driving circuits. The component comes in an isolated TO-220F package, facilitating simplified hardware installation and efficient thermal layout management.
Features
- High Voltage Capability
- Low On-Resistance
- Quality Tested
- Reliable Performance
Specifications
| Symbol |
Parameter |
Value |
Unit |
| VDSS |
Drain-Source Voltage |
900 |
V |
| VGS |
Gate-Source Voltage-Continuous |
±30 |
V |
| ID |
Drain Current-Continuous |
6.0 |
A |
| IDM |
Drain Current-Single Pulse |
24 |
A |
| PD |
Total Dissipation @ Tc = 25°C |
70 |
W |
| TJ |
Max. Operating Junction Temperature |
-55 to 150 |
°C |
| Tstg |
Storage Temperature |
-55 ~ 150 |
°C |
Electrical Characteristics (Tc = 25°C)
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS = 0; ID = 0.25mA |
900 |
– |
V |
| VGS(th) |
Gate Threshold Voltage |
VDS = 10V; ID = 0.25mA |
2.5 |
3.5 |
V |
| RDS(on)1 |
Drain-Source On-Resistance |
VGS = 10V; ID = 3.0A |
– |
2.5 |
Ω |
| IGSS |
Gate-Body Leakage Current |
VGS = ±30V; VDS = 0 |
– |
±0.1 |
uA |
| IDSS |
Zero Gate Voltage Drain Current |
VGS = 0 |
– |
25 |
uA |
| VSD |
Forward On-Voltage |
IS = 6.0A |
– |
1.3 |
V |
Thermal Characteristics
| Symbol |
Parameter |
Max |
Unit |
| Rthj-c |
Thermal Resistance, Junction to Case |
c |
°C/W |
Applications
- Motor drives
- DC-DC converters
- Power switches
- Solenoid drives
Package Content
- 1 x 2SK4005 N-Channel MOSFET Transistor 900V 6A TO-220F
DataSheet
