The 2SK4005 is a high-performance N-channel MOSFET transistor. It features high breakdown voltage and low on-resistance, making it a reliable choice for robust device performance, power switching, and high-voltage driving circuits. The component comes in an isolated TO-220F package, facilitating simplified hardware installation and efficient thermal layout management.
Features
High Voltage Capability
Low On-Resistance
Quality Tested
Reliable Performance
Specifications
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
6.0
A
IDM
Drain Current-Single Pulse
24
A
PD
Total Dissipation @ Tc = 25°C
70
W
TJ
Max. Operating Junction Temperature
-55 to 150
°C
Tstg
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics (Tc = 25°C)
Symbol
Parameter
Conditions
Min
Max
Unit
V(BR)DSS
Drain-Source Breakdown Voltage
VGS = 0; ID = 0.25mA
900
–
V
VGS(th)
Gate Threshold Voltage
VDS = 10V; ID = 0.25mA
2.5
3.5
V
RDS(on)1
Drain-Source On-Resistance
VGS = 10V; ID = 3.0A
–
2.5
Ω
IGSS
Gate-Body Leakage Current
VGS = ±30V; VDS = 0
–
±0.1
uA
IDSS
Zero Gate Voltage Drain Current
VGS = 0
–
25
uA
VSD
Forward On-Voltage
IS = 6.0A
–
1.3
V
Thermal Characteristics
Symbol
Parameter
Max
Unit
Rthj-c
Thermal Resistance, Junction to Case
c
°C/W
Applications
Motor drives
DC-DC converters
Power switches
Solenoid drives
Package Content
1 x 2SK4005 N-Channel MOSFET Transistor 900V 6A TO-220F
