Specifications:
- Type Designator: 2SK903
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Pd – Maximum Power Dissipation: 40 W
- |Vds| – Maximum Drain-Source Voltage: 800 V
- |Vgs| – Maximum Gate-Source Voltage: 20 V
- |Vgs(th)| – Maximum Gate-Threshold Voltage: 4 V
- |Id| – Maximum Drain Current: 3 A
- Tj – Maximum Junction Temperature: 150 °C
- ton – Turn-on Time: 60 nS
- Coss – Output Capacitance: 90 pF
- Rds – Maximum Drain-Source On-State Resistance: 4 Ohm
- Package: TO-220F
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