5N120BND N-Channel IGBT Transistor 1200V 21A TO-220
The 5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 is a robust, high-voltage power switching device designed for efficiency and reliability. With a collector-to-emitter voltage rating of 1200V and a continuous collector current of 21A, this IGBT leverages non-punch through (NPT) technology, making it well-suited for moderate frequency applications such as AC and DC motor controls, power supplies, and driver circuits for solenoids, relays, and contactors.
Features
- 21A, 1200V rating at TC = 25°C.
- 1200V switching SOA capability.
- Typical fall time of 175ns at TJ = 150°C.
- Low conduction losses.
- Integrated anti-parallel hyperfast diode.
Specifications
| Parameter | Value |
|---|---|
| Collector-to-Emitter Voltage | 1200V |
| Continuous Collector Current | 21A at TC=25°C |
| Pulsed Collector Current | 40A |
| Gate-to-Emitter Voltage | ±20V |
| Power Dissipation | 167W at TC=25°C |
| Operating Temperature Range | -55°C to 150°C |
| Package Type | TO-220AB |
| Collector-Emitter Saturation Voltage | 2.7V max at IC=5A, VGE=15V |
| Diode Forward Voltage | 3.50V max at IEC=10A |
| Diode Reverse Recovery Time | 65ns max at IEC=7A, dIEC/dt=200A/μs |
Applications
- AC motor controls.
- DC motor controls.
- Power supplies.
- Drivers for solenoids.
- Drivers for relays.
- Drivers for contactors.
Package Contents
- 1x 5N120BND N-Channel IGBT Transistor 1200V 21A TO-220.
