Name: Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P
SKU: 3496300159451
Price: 145.00 EGP
Availability: InStock

Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P

The 60N60FD1 (SGT60N60FD1PN) from Silan Microelectronics is a 60A, 600V Field Stop IGBT with an integrated fast recovery diode (FRD), supplied in the industry-standard TO-3P 3-pin through-hole package.

Built on Silan’s Field Stop IGBT technology, this device offers optimum performance for induction heating, UPS (uninterruptible power supplies), SMPS (switched-mode power supplies) and PFC (power factor correction) applications. It combines low conduction loss and fast switching with high input impedance, and achieves a typical collector-emitter saturation voltage of just 2.2V at IC = 60A.

Features

60A, 600V Field Stop IGBT (N-Channel)
VCE(sat) (typ.) = 2.2V @ IC = 60A
Low conduction loss
Fast switching (recommended frequency 10–60 kHz)
High input impedance
Co-packaged fast recovery diode
High current capability: 120A @ TC = 25°C, 180A pulsed
Wide junction temperature range: –55°C to +175°C

Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Test Condition	Rating	Unit
Collector to Emitter Voltage	V_CE	—	600	V
Gate to Emitter Voltage	V_GE	—	±20	V
Collector Current	I_C	TC = 25°C	120	A
Collector Current	I_C	TC = 100°C	60	A
Pulsed Collector Current	I_CM	—	180	A
Maximum Power Dissipation	P_D	TC = 25°C	321	W
Operating Junction Temperature	T_J	—	-55 ~ +175	°C
Storage Temperature Range	T_stg	—	-55 ~ +175	°C
THERMAL CHARACTERISTICS (TO-3P)
Thermal Resistance, Junction to Case (IGBT)	R_θJC	—	0.39	°C/W
Thermal Resistance, Junction to Case (FRD)	R_θJC	—	1.10	°C/W
Thermal Resistance, Junction to Ambient	R_θJA	—	40	°C/W
ELECTRICAL CHARACTERISTICS – IGBT (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Test Condition	Min. / Typ. / Max.	Unit
Collector to Emitter Breakdown Voltage	BV_CE	V_GE = 0V, I_C = 250µA	600 / – / –	V
C-E Leakage Current	I_CES	V_CE = 600V, V_GE = 0V	– / – / 200	µA
G-E Leakage Current	I_GES	V_GE = 20V, V_CE = 0V	– / – / ±400	nA
G-E Threshold Voltage	V_GE(th)	I_C = 250µA, V_CE = V_GE	4.0 / 5.0 / 6.5	V
Collector to Emitter Saturation Voltage	V_CE(sat)	I_C = 60A, V_GE = 15V	– / 2.2 / 2.7	V
Collector to Emitter Saturation Voltage	V_CE(sat)	I_C = 60A, V_GE = 15V, TC = 125°C	– / 2.6 / –	V
Input Capacitance	C_ies	V_CE = 30V, V_GE = 0V, f = 1MHz	– / 2850 / –	pF
Output Capacitance	C_oes		– / 294 / –	pF
Reverse Transfer Capacitance	C_res		– / 85 / –	pF
Turn-On Delay Time	T_d(on)	V_CE = 400V, I_C = 60A, R_g = 10Ω, V_GE = 15V, Inductive Load	– / 36 / –	ns
Rise Time	T_r		– / 142 / –	ns
Turn-Off Delay Time	T_d(off)		– / 193 / –	ns
Fall Time	T_f		– / 136 / –	ns
Turn-On Switching Loss	E_on	V_CE = 400V, I_C = 60A, R_g = 10Ω, V_GE = 15V, Inductive Load	– / 3.72 / –	mJ
Turn-Off Switching Loss	E_off		– / 1.77 / –	mJ
Total Switching Loss	E_st		– / 5.49 / –	mJ
Total Gate Charge	Q_g	V_CE = 400V, I_C = 60A, V_GE = 15V	– / 179 / –	nC
Gate to Emitter Charge	Q_ge		– / 23 / –	nC
Gate to Collector Charge	Q_gc		– / 100 / –	nC
ELECTRICAL CHARACTERISTICS – FRD (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Test Condition	Min. / Typ. / Max.	Unit
Diode Forward Voltage	V_FM	I_F = 30A, TC = 25°C	– / 1.9 / 2.6	V
Diode Forward Voltage	V_FM	I_F = 30A, TC = 125°C	– / 1.5 / –	V
Diode Reverse Recovery Time	T_rr	I_ES = 30A, dI_ES/dt = 200A/µs	– / 38 / –	ns
Diode Reverse Recovery Charge	Q_rr	I_ES = 30A, dI_ES/dt = 200A/µs	– / 85 / –	nC