Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P
The 60N60FD1 (SGT60N60FD1PN) from Silan Microelectronics is a 60A, 600V Field Stop IGBT with an integrated fast recovery diode (FRD), supplied in the industry-standard TO-3P 3-pin through-hole package.
Built on Silan’s Field Stop IGBT technology, this device offers optimum performance for induction heating, UPS (uninterruptible power supplies), SMPS (switched-mode power supplies) and PFC (power factor correction) applications. It combines low conduction loss and fast switching with high input impedance, and achieves a typical collector-emitter saturation voltage of just 2.2V at IC = 60A.
Features
- 60A, 600V Field Stop IGBT (N-Channel)
- VCE(sat) (typ.) = 2.2V @ IC = 60A
- Low conduction loss
- Fast switching (recommended frequency 10–60 kHz)
- High input impedance
- Co-packaged fast recovery diode
- High current capability: 120A @ TC = 25°C, 180A pulsed
- Wide junction temperature range: –55°C to +175°C
Specifications
| ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) | ||||
| Characteristic | Symbol | Test Condition | Rating | Unit |
| Collector to Emitter Voltage | VCE | — | 600 | V |
| Gate to Emitter Voltage | VGE | — | ±20 | V |
| Collector Current | IC | TC = 25°C | 120 | A |
| Collector Current | IC | TC = 100°C | 60 | A |
| Pulsed Collector Current | ICM | — | 180 | A |
| Maximum Power Dissipation | PD | TC = 25°C | 321 | W |
| Operating Junction Temperature | TJ | — | -55 ~ +175 | °C |
| Storage Temperature Range | Tstg | — | -55 ~ +175 | °C |
| THERMAL CHARACTERISTICS (TO-3P) | ||||
| Thermal Resistance, Junction to Case (IGBT) | RθJC | — | 0.39 | °C/W |
| Thermal Resistance, Junction to Case (FRD) | RθJC | — | 1.10 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | — | 40 | °C/W |
| ELECTRICAL CHARACTERISTICS – IGBT (TC = 25°C unless otherwise noted) | ||||
| Characteristic | Symbol | Test Condition | Min. / Typ. / Max. | Unit |
| Collector to Emitter Breakdown Voltage | BVCE | VGE = 0V, IC = 250µA | 600 / – / – | V |
| C-E Leakage Current | ICES | VCE = 600V, VGE = 0V | – / – / 200 | µA |
| G-E Leakage Current | IGES | VGE = 20V, VCE = 0V | – / – / ±400 | nA |
| G-E Threshold Voltage | VGE(th) | IC = 250µA, VCE = VGE | 4.0 / 5.0 / 6.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 60A, VGE = 15V | – / 2.2 / 2.7 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 60A, VGE = 15V, TC = 125°C | – / 2.6 / – | V |
| Input Capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | – / 2850 / – | pF |
| Output Capacitance | Coes | – / 294 / – | pF | |
| Reverse Transfer Capacitance | Cres | – / 85 / – | pF | |
| Turn-On Delay Time | Td(on) | VCE = 400V, IC = 60A, Rg = 10Ω, VGE = 15V, Inductive Load | – / 36 / – | ns |
| Rise Time | Tr | – / 142 / – | ns | |
| Turn-Off Delay Time | Td(off) | – / 193 / – | ns | |
| Fall Time | Tf | – / 136 / – | ns | |
| Turn-On Switching Loss | Eon | VCE = 400V, IC = 60A, Rg = 10Ω, VGE = 15V, Inductive Load | – / 3.72 / – | mJ |
| Turn-Off Switching Loss | Eoff | – / 1.77 / – | mJ | |
| Total Switching Loss | Est | – / 5.49 / – | mJ | |
| Total Gate Charge | Qg | VCE = 400V, IC = 60A, VGE = 15V | – / 179 / – | nC |
| Gate to Emitter Charge | Qge | – / 23 / – | nC | |
| Gate to Collector Charge | Qgc | – / 100 / – | nC | |
| ELECTRICAL CHARACTERISTICS – FRD (TC = 25°C unless otherwise noted) | ||||
| Characteristic | Symbol | Test Condition | Min. / Typ. / Max. | Unit |
| Diode Forward Voltage | VFM | IF = 30A, TC = 25°C | – / 1.9 / 2.6 | V |
| Diode Forward Voltage | VFM | IF = 30A, TC = 125°C | – / 1.5 / – | V |
| Diode Reverse Recovery Time | Trr | IES = 30A, dIES/dt = 200A/µs | – / 38 / – | ns |
| Diode Reverse Recovery Charge | Qrr | IES = 30A, dIES/dt = 200A/µs | – / 85 / – | nC |
Applications
- Induction Heating
- Uninterruptible Power Supplies (UPS)
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
Package Content
- 1 x Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P