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BLD135D NPN Transistor 400V 3.5A 50W SOT-82

BLD135D 400V 3.5A NPN transistor with 50W power dissipation, 700V collector-base rating, high-speed switching capability, and SOT-82 through-hole package.

20.00 EGP

In stockSKU 3496300159642
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BLD135D NPN Transistor 400V 3.5A 50W SOT-82

The BLD135D NPN Transistor is a high-voltage bipolar transistor designed for high-speed switching and power-control applications. It provides a maximum collector-emitter voltage of 400V, maximum collector-base voltage of 700V, and maximum collector current of 3.5A. The device is designed with a wide safe operating area and is suitable for switching applications requiring high voltage capability.
The BLD135D supports a maximum base current of 1A and a total power dissipation of 50W at the conditions specified in the datasheet. Its maximum junction temperature is 150°C, with a storage temperature range of -65°C to +150°C.

Features:
  • NPN bipolar transistor.
  • 400V collector-emitter voltage.
  • 700V collector-base voltage.
  • 9V emitter-base voltage.
  • 3.5A maximum collector current.
  • 1A maximum base current.
  • 50W total power dissipation.
Specifications:
Parameter Value
Part Number BLD135D
Transistor Type NPN Bipolar Transistor
Package SOT-82
Package Variant SOT-82S
Mounting Type Through-Hole
Collector-Base Voltage (VCBO) 700V
Collector-Emitter Voltage (VCEO) 400V
Emitter-Base Voltage (VEBO) 9V
Collector Current (IC) 3.5A
Base Current (IB) 1A
Total Power Dissipation (Ptot) 50W
Junction Temperature (Tj) 150°C
Storage Temperature (Tstg) -65°C to +150°C
Collector-Base Cutoff Current (ICBO) 100µA maximum
Collector-Emitter Cutoff Current (ICEO) 250µA maximum
Collector-Emitter Saturation Voltage 0.3V@0.8A, 0.2A base current
Collector-Emitter Saturation Voltage 1.2V@3A, 0.6A base current
Base-Emitter Saturation Voltage 1.2V@3A, 0.6A base current
DC Current Gain (hFE) 7 minimum at VCE=5V, IC=1mA
DC Current Gain (hFE) 10 to 40 at VCE=5V, IC=0.2A
DC Current Gain (hFE) 5 minimum at VCE=5V, IC=3.5A
Storage Time (ts) 2.0µs to 4.0µs
Falling Time (tf) 0.8µs
Diode Forward Voltage (VF) 2.0V@IF=1.8A
Pin Configuration:

Applications:
  • Charger circuits.
  • Energy-saving lamp circuits.
  • Electronic ballasts.
  • High-voltage switching circuits.
  • Power switching circuits.
  • Switching power supplies.
  • Electronic power-control circuits.
  • High-speed switching applications.
  • General-purpose NPN switching circuits.
Package Include:

1x BLD135D NPN Transistor 400V 3.5A 50W SOT-82.

Datasheet

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