New
BLD135D NPN Transistor 400V 3.5A 50W SOT-82
BLD135D 400V 3.5A NPN transistor with 50W power dissipation, 700V collector-base rating, high-speed switching capability, and SOT-82 through-hole package.
20.00 EGP
Buy NowBLD135D NPN Transistor 400V 3.5A 50W SOT-82
The BLD135D NPN Transistor is a high-voltage bipolar transistor designed for high-speed switching and power-control applications. It provides a maximum collector-emitter voltage of 400V, maximum collector-base voltage of 700V, and maximum collector current of 3.5A. The device is designed with a wide safe operating area and is suitable for switching applications requiring high voltage capability.
The BLD135D supports a maximum base current of 1A and a total power dissipation of 50W at the conditions specified in the datasheet. Its maximum junction temperature is 150°C, with a storage temperature range of -65°C to +150°C.
Features:
- NPN bipolar transistor.
- 400V collector-emitter voltage.
- 700V collector-base voltage.
- 9V emitter-base voltage.
- 3.5A maximum collector current.
- 1A maximum base current.
- 50W total power dissipation.
Specifications:
| Parameter | Value |
|---|---|
| Part Number | BLD135D |
| Transistor Type | NPN Bipolar Transistor |
| Package | SOT-82 |
| Package Variant | SOT-82S |
| Mounting Type | Through-Hole |
| Collector-Base Voltage (VCBO) | 700V |
| Collector-Emitter Voltage (VCEO) | 400V |
| Emitter-Base Voltage (VEBO) | 9V |
| Collector Current (IC) | 3.5A |
| Base Current (IB) | 1A |
| Total Power Dissipation (Ptot) | 50W |
| Junction Temperature (Tj) | 150°C |
| Storage Temperature (Tstg) | -65°C to +150°C |
| Collector-Base Cutoff Current (ICBO) | 100µA maximum |
| Collector-Emitter Cutoff Current (ICEO) | 250µA maximum |
| Collector-Emitter Saturation Voltage | 0.3V@0.8A, 0.2A base current |
| Collector-Emitter Saturation Voltage | 1.2V@3A, 0.6A base current |
| Base-Emitter Saturation Voltage | 1.2V@3A, 0.6A base current |
| DC Current Gain (hFE) | 7 minimum at VCE=5V, IC=1mA |
| DC Current Gain (hFE) | 10 to 40 at VCE=5V, IC=0.2A |
| DC Current Gain (hFE) | 5 minimum at VCE=5V, IC=3.5A |
| Storage Time (ts) | 2.0µs to 4.0µs |
| Falling Time (tf) | 0.8µs |
| Diode Forward Voltage (VF) | 2.0V@IF=1.8A |
Pin Configuration:
Applications:
- Charger circuits.
- Energy-saving lamp circuits.
- Electronic ballasts.
- High-voltage switching circuits.
- Power switching circuits.
- Switching power supplies.
- Electronic power-control circuits.
- High-speed switching applications.
- General-purpose NPN switching circuits.
Package Include:
1x BLD135D NPN Transistor 400V 3.5A 50W SOT-82.
Related products
