Product Specifications
- Type Designator: BUV48C
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 125 W
- Maximum Collector-Emitter Voltage (VBE = 0) |Vce| : 1200 V
- Maximum Collector-Emitter Voltage |Vce|: 700 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 15 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Package: TO-3P
