FDA70N20 MOSFET Transistor 70A 200V TO-3PN
FDA70N20: 200V, 70A N-Channel UniFET™ MOSFET. Low on-resistance (35mΩ) and gate charge for high-efficiency power converters, UPS, and PFC applications.
75.00 EGP
Buy NowFDA70N20 MOSFET Transistor 70A 200V TO-3PN
The FDA70N20 is part of the UniFET™ MOSFET high-voltage family, utilizing advanced planar stripe and DMOS technology. This MOSFET is specifically engineered to minimize on-state resistance while delivering enhanced switching performance and superior avalanche energy strength. It is an ideal choice for high-efficiency switching power converter applications.
✅Features
- Low On-Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitance
- Reliability
- High Power Handling
📜📚Specifications
Absolute Maximum Ratings (TC = 25°C)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Continuous Drain Current (TC = 25°C) | 70 | A |
| ID | Continuous Drain Current (TC = 100°C) | 45 | A |
| IDM | Pulsed Drain Current (Note 1) | 280 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 1742 | mJ |
| IAR | Avalanche Current (Note 1) | 70 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 41.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) | 417 | W |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C |
Thermal Characteristics
| Symbol | Parameter | Max. | Unit |
|---|---|---|---|
| RθJC | Thermal Resistance, Junction-to-Case | 0.3 | °C/W |
| RθCS | Thermal Resistance, Case-to-Sink (Typ.) | 0.24 | °C/W |
| RθJA | Thermal Resistance, Junction-to-Ambient | 40 | °C/W |
Electrical Characteristics (TC = 25°C)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250μA | 200 | – | – | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=200V, VGS=0V | – | – | 1 | μA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250μA | 3.0 | – | 5.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10V, ID=35A | – | 0.029 | 0.035 | Ω |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1MHz | – | 3050 | 3970 | pF |
| Coss | Output Capacitance | VDS=25V, VGS=0V, f=1MHz | – | 750 | 980 | pF |
| Crss | Reverse Transfer Capacitance | VDS=25V, VGS=0V, f=1MHz | – | 89 | 130 | pF |
| Switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS=160V, ID=70A, VGS=10V | – | 66 | 86 | nC |
💻Applications
- Power Supplies
- Power Conversion
- Display Technology
- Lighting
🎁Package Content
- 1 x FDA70N20 MOSFET Transistor 70A 200V TO-3PN
📖DataSheet
Related products
