FQA19N60 N-Channel MOSFET Transistor 200V 23A TO-3P
The FQA19N60 is an N-channel enhancement-mode power MOSFET from the QFET® family, designed for high-voltage switching applications. It is rated for a 600 V drain-source voltage and a continuous drain current of 18.5 A at 25°C, with a maximum drain-source on-state resistance of 380 mΩ at VGS = 10 V and ID = 9.3 A. The device uses planar stripe and DMOS technology to provide low on-state resistance, good switching performance, and high avalanche-energy capability.
The FQA19N60 is housed in a TO-3P through-hole package with three terminals: Gate, Drain, and Source. Its characteristics make it suitable for power conversion and switching circuits where high voltage handling and reliable switching are required. The datasheet specifically identifies switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts as suitable applications.
Features:
- N-channel enhancement-mode power MOSFET.
- QFET® technology.
- High 600 V drain-source voltage capability.
- Low drain-source on-state resistance.
- Low gate charge for efficient switching.
- Low reverse-transfer capacitance.
- Fast switching performance.
- 100% avalanche tested.
- Improved dv/dt capability.
- High avalanche-energy capability.
- Through-hole TO-3P package.
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Technology | Enhancement Mode |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) @ 25°C | 18.5 A |
| Continuous Drain Current @ 100°C | 11.7 A |
| Pulsed Drain Current (IDM) | 74 A |
| Drain-Source On-Resistance (RDS(on)) | 380 mΩ max |
| RDS(on) Test Conditions | VGS = 10 V, ID = 9.3 A |
| Gate-Source Voltage (VGS) | ±30 V |
| Gate Threshold Voltage (VGS(th)) | 5 V max |
| Typical Gate Charge | 70 nC |
| Single Pulsed Avalanche Energy | 1150 mJ |
| Repetitive Avalanche Energy | 30 mJ |
| Power Dissipation | 300 W @ TC = 25°C |
| Operating / Storage Temperature | -55°C to +150°C |
| Package | TO-3P / TO-3PN |
| Mounting | Through Hole |
| Number of Pins | 3 |
Pinout:
| Pin | Name | Function |
|---|---|---|
| 1 | Gate (G) | Controls the MOSFET switching |
| 2 | Drain (D) | High-current drain terminal |
| 3 | Source (S) | Source/current return terminal |
Applications:
- Switch-mode power supplies (SMPS).
- Active Power Factor Correction (PFC).
- Electronic lamp ballasts.
- High-voltage switching circuits.
- Power conversion circuits.
- Inverters and power control circuits.
- General-purpose high-voltage switching applications.
Package Included:
- 1 × FQA19N60 N-Channel MOSFET Transistor 200V 23A TO-3P.