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FQA80N60 N-Channel MOSFET 80A 600V

90.00 EGP

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Availability: In Stock
SKU:3496300084791
Specifications
Product Attribute Attribute Value
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3P
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 80 A
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4.5 V
Qg – Gate Charge: 250 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 195 W
Channel Mode: Enhancement
Configuration: Single
Rise Time: 50 ns
Transistor Type: 1 N-Channel
Datasheet

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