Specifications
Product Attribute | Attribute Value |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | Through Hole |
Package/Case: | TO-3P |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 600 V |
Id – Continuous Drain Current: | 80 A |
Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: | 4.5 V |
Qg – Gate Charge: | 250 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Pd – Power Dissipation: | 195 W |
Channel Mode: | Enhancement |
Configuration: | Single |
Rise Time: | 50 ns |
Transistor Type: | 1 N-Channel |
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