Specifications:
- Type Designator: FQPF80N06
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 176 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 80 A
- Maximum Junction Temperature (Tj): 150 °C
- Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
- Package: TO-220F
