FQPF80N06 MOSFET Transistor TO-220F

Specifications:

• Type Designator: FQPF80N06
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 176 W
• Maximum Drain-Source Voltage |Vds|: 60 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 80 A
• Maximum Junction Temperature (Tj): 150 °C
• Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
• Package: TO-220F