FS10SM N-Channel Power MOSFET Transistor TO-3P

FS10SM N-Channel Power MOSFET Transistor TO-3P

The FS10SM-18A N-Channel Power MOSFET Transistor TO-3P, manufactured by Mitsubishi, is a high-performance semiconductor device designed for high-speed switching applications. This N-channel MOSFET offers a robust drain-source voltage rating of 900V and a continuous drain current of 10A, making it an ideal choice for demanding power management tasks. Encased in a TO-3P package, the transistor ensures efficient heat dissipation and reliable operation across a wide temperature range from -55°C to +150°C. With a maximum power dissipation of 200W, this component is engineered to handle significant electrical stress while maintaining stability.

Features:

• High-speed switching capability for efficient power management.
• Drain-source voltage rating of 900V for robust performance.
• Continuous drain current of 10A with a pulsed current of 30A.
• Low on-state resistance of 1.2Ω to minimize power loss.
• Operating temperature range from -55°C to +150°C.

Specifications:

Pin Configuration:

Applications:

• Switch-mode power supplies (SMPS).
• DC-DC converters.
• Battery chargers.
• Power supplies for printers, copiers, and other consumer electronics.

Package Include:

1x FS10SM N-Channel Power MOSFET Transistor TO-3P

Datasheet:

FS10SM