-
E-Image MA800 4-Stage Aluminum DSLR Camera Monopod with 630FH Fluid Head
7,500.00 EGP7,500.00 EGP× -
-
-
G40T65FUK IGBT Transistor 650V 80A TO-247
G40T65FUK IGBT: 650V 80A TO-247. Features Trench Field Stop technology, low VCE(sat), and fast switching. Ideal for welding, UPS, and air conditioning systems.
80.00 EGP
In stockSKU 3496300134601
Buy Now
Shipping across EgyptDelivered to your door
Cash on deliveryPay when your order arrives
Not sure it fits your project?Ask us on WhatsApp - we reply fast
G40T65FUK IGBT Transistor 650V 80A TO-247
The BLG40T65FUK is a high-performance IGBT manufactured using advanced Trench Field Stop (T-FS) technology. This technology provides the device with a low collector-emitter saturation voltage (), optimized switching performance, and a low gate charge (). It is designed as a highly efficient and reliable component for power conversion and high-frequency switching applications.
✅Features
- Technology: Advanced Trench Field Stop (T-FS) technology.
- Switching Speed: Fast switching capability for reduced power loss.
- Saturation Voltage: Low for improved efficiency.
- Thermal Stability: Features a positive temperature coefficient.
- Integrated Diode: Includes a fast recovery anti-parallel diode.
- Compliance: RoHS compliant product.
📜📚Specifications
Absolute Maximum Ratings (TC = 25°C)
| Collector-Emitter Voltage (VCES) | 650 | V |
|---|---|---|
| Gate-Emitter Voltage (VGES) | ±30 | V |
| Continuous Collector Current (TC = 25°C) | 80 | A |
| Continuous Collector Current (TC = 100°C) | 40 | A |
| Pulsed Collector Current (ICM) | 160 | A |
| Diode Continuous Forward Current (TC = 25°C) | 40 | A |
| Short Circuit Withstand Time (tsc) | 3.0 | µs |
| Power Dissipation (PD) | 298 | W |
| Operating Junction Temperature (TJ) | -55 to 175 | °C |
Static Characteristics
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.55 (Typ) / 1.95 (Max) | V |
|---|---|---|
| Gate Threshold Voltage (VGE(th)) | 4.8 to 6.2 (5.5 Typ) | V |
| Collector-Emitter Leakage Current (ICES) | 4.0 (Max) | µA |
| Gate-Emitter Leakage Current (IGES) | 200 (Max) | nA |
Dynamic & Thermal Characteristics
| Input Capacitance (Ciss) | 2225 | pF |
|---|---|---|
| Total Gate Charge (Qg) | 110 | nC |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 40 | °C/W |
💻Applications
- Welding Converters
- Uninterruptible Power Supplies (UPS)
- Boost Choppers
- Air Conditioning systems
- High switching frequency applications
🎁Package Content
- 1 x G40T65FUK IGBT Transistor 650V 80A TO-247
📖DataSheet
Related products
