Specifications:
Product Attribute | Attribute Value |
Product Category: | IGBTs |
Technology: | Si |
Package/Case: | TO-247-3 |
Mounting Style: | Through Hole |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.45 V |
Maximum Gate Emitter Voltage: | – 20 V, 20 V |
Continuous Collector Current at 25 C: | 35 A |
Pd – Power Dissipation: | 298 W |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Series: | HGTG10N120BND |
Continuous Collector Current: | 35 A |
Continuous Collector Current Ic Max: | 35 A |
Gate-Emitter Leakage Current: | +/- 250 nA |
Product Type: | IGBT Transistors |
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