IRFP064N N-Channel power MOSFET Transistor 55V 110A TO-247AC
The IRFP064N is part of the HEXFET® family of power MOSFETs by International Rectifier, designed to handle high currents with low on-resistance. This power MOSFET operates at a maximum drain-to-source voltage of 55V and can support a continuous drain current of up to 110A, making it suitable for high-power applications that require efficiency and reliability. It is built using advanced processing technology to achieve ultra-low on-resistance, ensuring minimal power loss during operation. The device is ideal for use in applications like motor control, power supplies, and automotive electronics.
Its robust design offers excellent switching performance, with a fast switching speed that helps improve system efficiency. It also has a high operating temperature tolerance, capable of functioning in environments up to 175°C. The IRFP064N’s low on-resistance and fast switching capability make it a go-to component for applications requiring high efficiency and thermal management. With the TO-247 package, it is suitable for industrial applications, offering a more reliable alternative to traditional TO-220 packages for higher power levels.
Features:
- Advanced Process Technology for enhanced performance.
- Ultra-Low On-Resistance for improved efficiency.
- Fast Switching Speed to optimize system performance.
- Rugged Design for high reliability in demanding environments.
- Fully Avalanche Rated, ensuring safe operation in extreme conditions.
- High Operating Temperature Range for reliable use in various conditions.
- Low Gate Drive Requirements due to its low gate threshold voltage.
- High Continuous Drain Current capability for power-hungry applications.
- TO-247 Package ideal for high-power applications, providing enhanced thermal management.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds): | 55V |
| Continuous Drain Current (Id): | 110A |
| Pulsed Drain Current (Idm): | 390A |
| Power Dissipation (Pd): | 200W |
| Gate-Source Voltage (Vgs): | ±20V |
| On-Resistance (Rds(on)): | 0.008Ω |
| Gate Threshold Voltage (Vgs(th)): | 2V to 4V |
| Single Pulse Avalanche Energy (Eas): | 480mJ |
| Operating Junction Temperature (Tj): | -55°C to 175°C |
| Capacitance (Ciss): | 4000pF |
| Gate Charge (Qg): | 170nC |
| Reverse Recovery Time (trr): | 110ns |
| Body Diode Forward Voltage (Vsd): | 1.3V |
Pinout:
| Pin Number | Pin Name | Function |
|---|---|---|
| 1 | Gate (G) | Control terminal. Voltage applied here switches the device ON/OFF. |
| 2 | Drain (D) | High-current, high-voltage terminal. The metal tab is internally connected to this pin. |
| 3 | Source (S) | Common/return terminal. connected to ground. |
Footprint:
Applications:
- High-Current DC-DC Converters and Switch-Mode Power Supplies (SMPS).
- Motor Drives and Controllers (for BLDC, Stepper, AC Induction Motors).
- Uninterruptible Power Supplies (UPS) and Inverters.
- High-Power Audio Amplifiers (Class D).
- Welding Equipment.
- Automotive and Industrial Power Switching.
Packages:
- 1x IRFP064N N-Channel power MOSFET Transistor 55V 110A TO-247AC.
