Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Features
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
Specifications
| Attribute | Value |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 6.8A |
| Power Dissipation (Pd) | 150W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@10V,4.1A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | N Channel |
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