IRFPC50 Power MOSFET Transistor 600V 11A TO-247
The IRFPC50 is a third-generation N-channel power MOSFET designed to provide an excellent combination of high voltage capability, fast switching performance, low on-state resistance, and rugged reliability. With a drain-source voltage rating of 600V and a continuous drain current capability of 11A, this device is ideal for medium- to high-power switching applications. The MOSFET utilizes advanced cell design technology to achieve efficient operation while minimizing switching losses.
Packaged in a TO-247 enclosure, the IRFPC50 offers excellent thermal performance and easy mounting for high-power applications. The device features avalanche energy capability, dynamic dV/dt ruggedness, and simple gate drive requirements, making it suitable for power conversion systems, industrial automation equipment, UPS systems, motor controllers, induction heating circuits, and high-voltage DC-DC converters.
Features:
- N-channel enhancement-mode MOSFET.
- High-voltage power switching capability.
- Fast switching performance.
- Low gate drive power requirements.
- Avalanche rated device.
- Dynamic dV/dt ruggedness.
- Low on-state resistance.
- High current handling capability.
- Excellent thermal characteristics.
- Easy paralleling capability.
- Rugged device construction.
- Integral body diode.
- Suitable for high-frequency switching.
- Isolated mounting hole package design.
- Designed for industrial and commercial applications.
- Lead-free versions available.
Specifications:
| Parameter | Value |
|---|---|
| Part Number | IRFPC50 |
| MOSFET Type | N-Channel |
| Drain-Source Voltage (VDS) | 600V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) @ 25°C | 11A |
| Continuous Drain Current (ID) @ 100°C | 7A |
| Pulsed Drain Current (IDM) | 44A |
| Drain-Source On Resistance (RDS(on)) | 0.60Ω Max |
| Maximum Power Dissipation | 180W |
| Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Total Gate Charge (Qg) | 140nC Max |
| Input Capacitance (Ciss) | 2700pF |
| Output Capacitance (Coss) | 300pF |
| Reverse Transfer Capacitance (Crss) | 61pF |
| Forward Transconductance (gfs) | 5.7S Minimum |
| Avalanche Energy (EAS) | 920mJ |
| Operating Junction Temperature | -55°C to +150°C |
| Package Type | TO-247 |
Pinout:
| Pin | Function |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Applications:
- Switch-mode power supplies (SMPS).
- AC-DC power converters.
- DC-DC converters.
- Motor drive circuits.
- Industrial inverters.
- UPS systems.
- Battery charging systems.
- High-voltage switching circuits.
- Induction heating equipment.
- Solar power inverters.
- Power factor correction circuits.
- Electronic ballast systems.
- Industrial automation equipment.
- High-frequency power control systems.
Package Included:
- 1x IRFPC50 Power MOSFET Transistor 600V 11A TO-247.