IRFPE50 N-Channel MOSFET Transistor TO-247AC

HexFET Power MosFET Transistors N-Channel

Features:

• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

Maximum Ratings

• Maximum Drain-Source Voltage |Vds|: 800 V
• Continuous Drain Current VGS @ 10V
  • ID @ TC=25°C: 7.8A
  • ID @ TC=100°C: 4.9A
• Pulsed Drain Current: 31A
• Power Dissipation: 190W
• Gate-to-Source Voltage: +/- 20V
• Single Pulse Avalanche Energy: 770mJ
• Avalanche Current: 7.8A
• Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
• Peak Diode Recovery dv/dt: 2.0V/ns
• Operating Temperature: -55°C to 150°C
• Package: TO-247AC
• Mounting: Through Hole

IRFPE50 Datasheet