IRFPE50 N-Channel MOSFET Transistor
The IRFPE50 is an N-channel MOSFET transistor designed for high-performance power switching applications. It is engineered to deliver high efficiency and reliability in diverse electronic circuits. With an ability to handle significant drain currents and voltage, this MOSFET is a popular choice for power control and conversion systems.
The transistor features a low on-resistance (RDS(on)) for minimal power loss during operation, making it suitable for various demanding applications. Its avalanche-tested design ensures robustness against energy surges, while the MOSFET’s high drain-source voltage rating contributes to its versatility in handling a wide range of voltages.
Additionally, the IRFPE50 is designed for high thermal stability, operating at a wide temperature range, and has minimal lot-to-lot variation to ensure consistent and reliable performance over time. These characteristics make it ideal for use in switching power supplies, motor control systems, and other high-voltage applications.
Features:
- Drain current: 7.8A @ TC=25°C.
- Drain-source voltage: VDSS = 800V (Min).
- Static drain-source on-resistance: RDS(on) = 1.2Ω (Max) @ VGS = 10V.
- 100% avalanche tested.
- Minimum lot-to-lot variations for robust device performance.
Specifications:
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS): | 800 | V |
| Gate-Source Voltage (VGS): | ±20 | V |
| Drain Current (ID): | 7.8 | A |
| Drain Current (IDM): | 31 | A |
| Total Dissipation @ TC=25°C (PD): | 190 | W |
| Maximum Operating Junction Temperature (Tj Max): | -55 ~ 150 | °C |
| Storage Temperature (Tstg): | -55 ~ 150 | °C |
| Thermal Resistance (Junction to Case) (Rth j-c): | 0.65 | °C/W |
| Junction-to-Ambient (RθJA): | 40 | °C/W |
Pinout Diagram:
Footprint:
Applications:
- Switching Power Supplies
- Converters
- AC and DC Motor Controls
Package includes:
- 1x IRFPE50 N-Channel Power MOSFET 800V 7.8A TO-247AC
