Specifications
- Type Designator: IRFZ42
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 150 W
- Maximum Drain-Source Voltage |Vds|: 50 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 35 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 100(max) nC
- Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Reviews
There are no reviews yet.