These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Features
- 9.5A, 900V, Rds(on)=730mΩ (Max.) @ Vgs=10V, Id=4.75A
- Low Gate Charge (Typ. 40nC)
- Low Crss (Typ. 18pF)
- 100% Avalanche Tested
Specifications
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220F |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 600 V |
| Id – Continuous Drain Current: | 9.5 A |
| Rds On – Drain-Source Resistance: | 730 mOhms |
| Vgs – Gate-Source Voltage: | – 30 V, + 30 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 44 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 50 W |
| Configuration: | Single |
| Fall Time: | 77 ns |
| Rise Time: | 69 ns |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 144 ns |
| Typical Turn-On Delay Time: | 23 ns |
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