TIP32C PNP Power Transistor 100V 3A TO-220
The TIP32C is a silicon Epitaxial-base PNP power transistor supplied in a TO-220 package. It is designed for use in medium power linear and switching applications, including linear and switching industrial equipment. The device has a collector-emitter voltage rating of -100 V, a continuous collector current rating of -3 A, and a collector peak current rating of -5 A for pulse widths below 5 ms. Its total dissipation is rated at 40 W at a case temperature of 25 °C and 2 W at an ambient temperature of 25 °C.
Features
- Silicon Epitaxial-base PNP power transistor
- TO-220 package
- Intended for medium power linear and switching applications
- Collector-emitter voltage rating: -100 V
- Collector current rating: -3 A
- Collector peak current rating: -5 A for tP < 5 ms
- Total dissipation: 40 W at Tcase = 25 °C
- Total dissipation: 2 W at Tamb = 25 °C
Specifications
| Specification | Value |
|---|---|
| General / Order Code | |
| Part number | TIP32C |
| Marking | TIP32C |
| Device type | Silicon Epitaxial-base PNP power transistor |
| Package | TO-220 |
| Absolute Maximum Ratings | |
| Collector-base voltage, VCBO (IE = 0) | -100 V |
| Collector-emitter voltage, VCEO (IB = 0) | -100 V |
| Emitter-base voltage, VEBO (IC = 0) | -5 V |
| Collector current, IC | -3 A |
| Collector peak current, ICM (tP < 5 ms) | -5 A |
| Base current, IB | -1 A |
| Total dissipation, PTOT (Tcase = 25 °C) | 40 W |
| Total dissipation, PTOT (Tamb = 25 °C) | 2 W |
| Storage temperature, Tstg | -65 to 150 °C |
| Max operating junction temperature, TJ | 150 °C |
| Electrical Characteristics | |
| Test condition | Tcase = 25 °C unless otherwise specified |
| Collector cut-off current, ICEO (IB = 0), VCB = -60 V | Max. -0.3 mA |
| Collector cut-off current, ICES (VBE = 0), VCB = -100 V | Max. -0.2 mA |
| Emitter cut-off current, IEBO (IC = 0), VEB = -5 V | Max. -1 mA |
| Collector-emitter sustaining voltage, VCEO(sus) (IB = 0), IC = -30 mA | Min. -100 V |
| Collector-emitter saturation voltage, VCE(sat), IC = -3 A, IB = 375 mA | Max. -1.2 V |
| Base-emitter voltage, VBE(on), IC = -3 A, VCE = -4 V | Max. -1.8 V |
| DC current gain, hFE, IC = -1 A, VCE = -4 V | Min. 25, Typ. 50 |
| DC current gain, hFE, IC = -3 A, VCE = -4 V | Min. 10 |
Applications
- Linear and switching industrial equipment
- Medium power linear and switching applications
Package Content
- 1 x TIP32C PNP Power Transistor 100V 3A TO-220
