TOSHIBA 2SK3878 N-Channel MOSFET Transistor 900V 9A 2−16C1B

The TOSHIBA 2SK3878 is a 900V, 9A N-Channel MOSFET ideal for switching regulators. It features a low 1.0Ω ON-resistance for high efficiency.

45.00 EGP

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SKU:3496300150885
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TOSHIBA 2SK3878 N-Channel MOSFET Transistor 900V 9A 2−16C1B

The TOSHIBA 2SK3878 is a Silicon N-Channel MOS Type (π- MOSIV) field-effect transistor. It operates in enhancement mode and is specifically designed to provide highly efficient performance and reliable high-voltage operation. This component is supplied in a standard TOSHIBA 2-16C1B package (JEITA SC-65 compliant).

Features
  • Low drain-source ON-resistance: RDS(ON) = 1.0 Ω (typ.)
  • High forward transfer admittance: |Yfs| = 7.0 S (typ.)
  • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
  • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 900 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
Drain current (DC) ID 9 A
Drain current (Pulse) IDP 27 A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy EAS 778 mJ
Avalanche current IAR 9 A
Repetitive avalanche energy EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth(ch-c) 0.833 °C/W
Thermal resistance, channel to ambient Rth(ch-a) 50 °C/W
Key Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Typ. / Range Unit
Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 900 (Min) V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 to 4.0 V
Drain-source ON resistance RDS(ON) VGS = 10 V, ID = 4 A 1.0 (1.3 Max) Ω
Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 2200 pF
Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 190 pF
Total gate charge Qg VDD ≈ 400 V, VGS = 10 V, ID = 9 A 60 nC

Applications
  • Switching Regulator Applications
Package Content
  • 1 x TOSHIBA 2SK3878 N-Channel MOSFET Transistor 900V 9A 2−16C1B
DataSheet
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