Toshiba K2039 N-Channel MOSFET Transistor 900V 5A TO-3PN
The 2SK2039 N-Channel MOSFET Transistor 900V 5A TO-3PN is a high-voltage, high-power switching MOSFET housed in a rugged TO-3PN metal package. It delivers up to 900 V drain-source voltage tolerance, 5 A continuous drain current at 25 °C case temperature, and 150 W total power dissipation, making it ideal for demanding high-voltage DC-DC converters, switching regulators, and power amplifiers requiring fast switching and rugged electrical performance.
Features
- 900V drain-source voltage rating for high-voltage switching applications.
- 5A continuous DC drain current capability for sustained loads.
- High pulse current and power dissipation ratings for surge/short-duration events.
- Robust TO-3PN metal package for excellent thermal transfer and heatsinking.
- Wide gate-source voltage tolerance for resilient gate drive (±30V typical maximum).
- Fast switching characteristics suitable for power converters and regulators.
- Suitable for use in high-voltage inverters, DC-DC converters, motor drive front-ends, and crowbar/protection circuits.
Specifications
MAXIMUM RATINGS (Ta=25°C)
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 900 | V |
| Drain-Gate Voltage (RGS=20kΩ) | VDGR | 900 | V |
| Gate-Source Voltage | VGSS | ±30 | V |
| Drain Current (DC) | ID | 5 | A |
| Drain Current (Pulse) | IDp | 15 | A |
| Drain Power Dissipation (TC=25°C) | PD | 150 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
Dimensions and PINOUT
Applications
- High-voltage DC-DC converters and switching regulators.
- Power amplifiers in motor drives or inductive/transformer circuits.
- Surge-resistant power switches and crowbar protection.
- High-voltage inverters and rugged control electronics.
Package Content
- 1 x Toshiba K2039 N-Channel MOSFET Transistor 900V 5A TO-3PN
