Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20
The TC5047AP-1 is a static read/write memory organized as 1024 words by 4 bits, manufactured using Silicon Gate CMOS technology. It features ultra-low power dissipation, making it suitable for battery-operated portable memory systems and nonvolatile memory applications with battery backup. The device operates from a single 5V power supply and requires no refresh cycles due to its static operation, which simplifies power supply circuit design. It includes three-state outputs for easy memory expansion and microprocessor peripheral interface, alongside low minimum data retention voltage requiring simple backup circuitry.
Features
- CMOS static RAM architecture.
- Static operation without refresh requirements.
- Low power consumption.
- Three-state outputs for easy memory expansion.
- TTL-compatible input and output levels.
- Suitable for battery-backed memory systems.
- Single power supply operation.
- Reliable data retention capability.
- Through-hole package for easy PCB mounting.
- Designed for microprocessor peripheral memory applications.
Specifications
Recommended Operating Conditions (Ta = -30 to 85 °C)
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
| Supply Voltage |
VDD |
4.5 |
5.0 |
5.5 |
V |
| Input High Voltage |
VIH |
VDD – 1.5 |
– |
VDD + 0.3 |
V |
| Input Low Voltage |
VIL |
-0.3 |
– |
0.6 |
V |
| Data Retention Voltage |
VDH |
2.0 |
– |
5.5 |
V |
DC Electrical Characteristics (Ta = -30 to 85 °C)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Standby Current |
IDDS |
VDD = 2 ~ 5.5V, CE2 = 0.2V |
– |
– |
20 |
μA |
| Operating Current |
IDDO |
VDD = 5.5V, tCYC = 1 μs |
– |
10 |
20 |
mA |
| Input Current |
IIN |
0V ≤ VIN ≤ VDD |
-1.0 |
– |
1.0 |
μA |
| Output Leakage Current |
ILO |
0V ≤ VOUT ≤ VDD |
-5.0 |
– |
5.0 |
μA |
| Output High Current |
IOH |
VDD = 4.5V, VOH = 2.4V |
-1.0 |
– |
– |
mA |
| Output Low Current |
IOL |
VDD = 4.5V, VOL = 0.4V |
1.6 |
– |
– |
mA |
AC Characteristics (VDD = 4.5 ~ 5.5V, Ta = -30 to 85 °C, CL = 100 pF)
| Parameter |
Symbol |
Min |
Max |
Unit |
| Access Time |
tACC |
– |
550 |
ns |
| Read Cycle Time |
tRC |
650 |
– |
ns |
| Write Cycle Time |
tWC |
650 |
– |
ns |
| Precharge Time |
tPC |
100 |
– |
ns |
| Write Pulse Width |
tWP |
300 |
– |
ns |
| Data Setup Time |
tDS |
300 |
– |
ns |
| Data Hold Time |
tDH |
0 |
– |
ns |
Absolute Maximum Ratings
| Parameter |
Symbol |
Rating |
Unit |
| Power Supply Voltage |
VDD |
-0.3 to 7.0 |
V |
| Input Voltage |
VIN |
-0.3 to VDD + 0.3 |
V |
| Output Voltage |
VOUT |
0 to VDD |
V |
| Power Dissipation |
PD |
700 (at Ta = 85 °C) |
mW |
| Operating Temperature |
TOPR |
-30 to 85 |
°C |
| Storage Temperature |
TSTG |
-55 to 150 |
°C |
Pinout
Applications
- Battery-operated portable memory systems.
- Nonvolatile memory with battery backup.
- Microprocessor peripheral memory.
Package Content
- 1 x Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20.
Datasheet
