Features
- Simple Byte Write Operation
—No High Voltages Necessary
—Single TTL Level WE Signal Modifies Data
—Internally latched Address and Data
—Self Timed Write
—Noise Protected WE Pin - Reliable N-Channel Floating Gate MOS Technology
- Single 5V Supply
- Byte Write Time: 10 ms Max.
- Fast Access Time: 300 ns Max.
- Low Power Diss
—Active Current: 140 mA Max.
—Standby Current: 60 mA Max. - JEDEC Approved Byte-Wide Pinout
X2816AD SPECIFICATIONS
| Sub Category | EEPROMs |
| Access Time-Max | 300.0 ns |
| Data Retention Time-Min | 100 |
| Memory Density | 16384.0 bit |
| Memory IC Type | EEPROM |
| Memory Width | 8 |
| Number of Functions | 1 |
| Number of Terminals | 24 |
| Number of Words | 2048.0 words |
| Number of Words Code | 2K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Min | 0.0 Cel |
| Operating Temperature-Max | 70.0 Cel |
| Organization | 2KX8 |
| Package Code | DIP |
| Number of Pins | 24 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Parallel/Serial | PARALLEL |
| Seated Height-Max | 5.72 mm |
| Standby Current-Max | 0.06 Amp |
| Supply Current-Max | 0.14 Amp |
| Supply Voltage-Nom (Vsup) | 5.0 V |
| Supply Voltage-Min (Vsup) | 4.75 V |
| Supply Voltage-Max (Vsup) | 5.25 V |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54 mm |
| Terminal Position | DUAL |
| Length | 32.07 mm |
| Width | 15.24 mm |
| Additional Feature | BYTE WRITE; OVER 100 YEARS DATA RETENTION |
