XBLW 8205A SMD MOSFET Transistor N-CH ARR 20V 6A SOT-23-6L

XBLW 8205A SMD MOSFET Transistor N-CH ARR 20V 6A SOT-23-6L

The XBLW 8205A is a high-performance, dual N-channel enhancement mode MOSFET array specifically engineered for efficient power switching and robust battery protection applications. Utilizing advanced trench gate technology, this component delivers exceptionally low on-resistance (RDS(on)) and minimal gate charge, enabling highly reliable operation with logic-level gate voltages as low as 2.5V. The device seamlessly integrates two independent N-channel MOSFETs within a single, space-saving SOT-23-6L surface-mount package, making it an optimal solution for high-density printed circuit board layouts where footprint minimization is critical.

Features:

• Dual N-channel enhancement mode MOSFET array integrated into a single package.
• Advanced trench gate technology ensures ultra-low RDS(on) and high switching efficiency.
• Maximum drain-source voltage rating of 20V with 6A continuous drain current capability.
• Ultra-low on-resistance of less than 25mΩ at a gate-source voltage of 4.5V.
• Low total gate charge of 11nC enables fast switching speeds and reduced drive requirements.
• Operates reliably with gate voltages as low as 2.5V for direct logic-level compatibility.

Specifications:

Footprint:

Applications:

• Lithium-ion and lithium-polymer battery protection circuits.
• Portable electronic devices and handheld instrumentation.
• Load switching and power management modules.
• DC-DC converter output stages and post-regulation circuits.
• Motor control and driver circuits in compact appliances.
• Consumer electronics requiring efficient low-voltage switching.

Package Include:

1x XBLW 8205A SMD MOSFET Transistor N-CH ARR 20V 6A SOT-23-6L.

Datasheet