-55V Single P-Channel Power MOSFET in a TO-220 package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High-current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification
- High performance in low frequency applications
- Standard pin-out allows for drop-in replacement
- High current capability
Specifications
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 55 V |
| Id – Continuous Drain Current: | 31 A |
| Rds On – Drain-Source Resistance: | 60 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 42 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 110 W |
| Configuration: | Single |
| Fall Time: | 63 ns |
| Forward Transconductance – Min: | 8 S |
| Rise Time: | 66 ns |
