MMBT5401 2L 150V 300mW 200@10mA,5V 600mA PNP SOT-23 Bipolar Transistors – BJT
1.25 EGP
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SKU:3496300072316
Specifications
| Attribute |
Value |
| Category |
Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
| Datasheet |
Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5401 |
| RoHS |
|
| Collector Cut-Off Current (Icbo) |
100nA |
| Collector-Emitter Breakdown Voltage (Vceo) |
150V |
| Power Dissipation (Pd) |
300mW |
| DC Current Gain (hFE@Ic,Vce) |
200@10mA,5V |
| Collector Current (Ic) |
600mA |
| Transition Frequency (fT) |
100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
500mV@50mA,5mA |
| Transistor Type |
PNP |
| Operating Temperature |
+150℃@(Tj) |
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