Specifications:
| Product Attribute | Attribute Value |
| Product Category: | IGBTs |
| Technology: | Si |
| Package/Case: | TO-247-3 |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.45 V |
| Maximum Gate Emitter Voltage: | – 20 V, 20 V |
| Continuous Collector Current at 25 C: | 35 A |
| Pd – Power Dissipation: | 298 W |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | HGTG10N120BND |
| Continuous Collector Current: | 35 A |
| Continuous Collector Current Ic Max: | 35 A |
| Gate-Emitter Leakage Current: | +/- 250 nA |
| Product Type: | IGBT Transistors |
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