Specifications:
- Type Designator: 2SC3089
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 80 W
- Maximum Collector-Base Voltage |Vcb|: 800 V
- Maximum Collector-Emitter Voltage |Vce|: 500 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 7 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Package: TO-3P
